Solid-state imaging element, production method thereof, and electronic device

ABSTRACT

A solid-state imaging element including a phase difference detection pixel pair that includes first ( 2 PA) and second ( 2 PB) phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit ( 52, 53   b,    53   c ) arranged at an upper side of a semiconductor substrate ( 12 ) and a second photoelectric conversion unit ( 42, 43 ) arranged within the semiconductor substrate. The first photoelectric conversion film ( 52 ) may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging element, aproduction method thereof, and an electronic device. Specifically, thepresent disclosure relates to a solid-state imaging element, aproduction method thereof, and an electronic device, which make itpossible to form a focus detection pixel of a solid-state imagingelement in which a photoelectric conversion unit is formed at an upperside of a semiconductor layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority PatentApplication JP 2013-181248 filed on Sep. 2, 2013, the entire contents ofwhich are incorporated herein by reference.

BACKGROUND ART

A recent CMOS image sensor has employed a method to use, as an autofocusfunction of a camera, a focus detection pixel having asymmetricsensitivity to an incident angle of light. As a method to realize afocus detection pixel, a method to arrange a pixel pair having a firstpixel in which a right half thereof is opened by a light shielding film,and a second pixel, in which a left half thereof is opened, has beenprovided (see, for example, JP 2009-99817 A and JP 2011-171749 A). Themethod is similar to both of an image sensor of a surface irradiationtype and an image sensor of a rear surface irradiation type. Also, toincrease asymmetry of sensitivity of a focus detection pixel, a lightshielding film is formed in the vicinity of a silicon layer to which aphotodiode is formed, as close as possible.

CITATION LIST Patent Literature

-   PTL 1: JP 2009-99817 A-   PTL 2: JP 2011-171749 A

SUMMARY OF INVENTION Technical Problem

Such a method to realize a focus detection pixel has been used for aphotodiode formed in a silicon layer.

Recently, an image sensor in which a photoelectric conversion film islaminated on an upper side of a silicon layer and alongitudinal-direction spectral image sensor having both a photoelectricconversion layer formed at an upper side of a silicon layer and aphotodiode formed in a silicon layer, have been developed. Thus, apreferable method to form a focus detection pixel thereto has beendesired.

In the view of forgoing, the present disclosure describes a focusdetection pixel of a solid-state imaging element in which aphotoelectric conversion unit is formed at an upper side of asemiconductor layer.

Solution to Problem

A solid-state imaging element of a first aspect of the presentdisclosure includes: a phase difference detection pixel pair includingfirst and second phase difference detection pixels, each phasedifference detection pixel of the first and second phase differencedetection pixels including a first photoelectric conversion unitarranged at an upper side of a semiconductor substrate and a secondphotoelectric conversion unit arranged within the semiconductorsubstrate, wherein the first photoelectric conversion unit includes afirst photoelectric conversion film sandwiched between an upperelectrode and a lower electrode.

An electronic device of a second aspect of the present disclosureincludes: a solid state imaging element including a phase differencedetection pixel pair including first and second phase differencedetection pixels, each phase difference detection pixel of the first andsecond phase difference detection pixels including a first photoelectricconversion unit arranged at an upper side of a semiconductor substrateand a second photoelectric conversion unit arranged within thesemiconductor substrate, wherein the first photoelectric conversion unitincludes a first photoelectric conversion film sandwiched between anupper electrode and a lower electrode; and an optical unit configured toreceive incident light and form an image on an imaging surface of thesolid-state imaging element.

A method of manufacturing of a third aspect of the present disclosureincludes: forming a plurality of first photoelectric conversion unitswithin a semiconductor substrate, the first photoelectric conversionunits configured to photoelectrically convert a first wavelength oflight; forming a plurality of second photoelectric conversion unitsabove the semiconductor substrate, wherein the plurality of secondphotoelectric conversion units are configured to photoelectricallyconvert a second wavelength of light.

Each of the solid-state imaging element and the electronic device may bean independent apparatus or a module embedded into a differentapparatus.

Advantageous Effects of Invention

According to the first to third aspects of the present disclosure, afocus detection pixel can be formed on a solid-state imaging element inwhich a photoelectric conversion unit is formed on an upper side of asemiconductor layer.

Note that effects are not limited to what has been described here andmay be any affects described in the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view illustrating a schematic configuration of a solid-stateimaging element according to an embodiment of the present disclosure.

FIG. 2 is a sectional configuration view illustrating a phase differencepixel of a first embodiment.

FIG. 3 is a sectional configuration view illustrating a phase differencepixel of a second embodiment.

FIG. 4 is a sectional configuration view illustrating a phase differencepixel of a third embodiment.

FIG. 5 is a sectional configuration view illustrating a phase differencepixel of a fourth embodiment.

FIG. 6 is a sectional configuration view illustrating a phase differencepixel of a fifth embodiment.

FIG. 7 is a sectional configuration view illustrating a phase differencepixel of a sixth embodiment.

FIG. 8 is a sectional configuration view illustrating a phase differencepixel of a seventh embodiment.

FIG. 9 is a sectional configuration view illustrating a phase differencepixel of an eighth embodiment.

FIG. 10 is a sectional configuration view illustrating a phasedifference pixel of a ninth embodiment.

FIG. 11 is a sectional configuration view illustrating a phasedifference pixel of a tenth embodiment.

FIG. 12 is a sectional configuration view illustrating a phasedifference pixel of an eleventh embodiment.

FIG. 13 is a sectional configuration view illustrating a phasedifference pixel of a twelfth embodiment.

FIG. 14 is a view for describing a production method of the firstembodiment.

FIG. 15 is a view for describing the production method of the firstembodiment.

FIG. 16 is a view for describing the production method of the firstembodiment.

FIG. 17 is a view for describing the production method of the firstembodiment.

FIG. 18 is a view for describing the production method of the firstembodiment.

FIG. 19 is a view for describing the production method of the firstembodiment.

FIG. 20 is a view for describing the production method of the firstembodiment.

FIG. 21 is a view for describing the production method of the firstembodiment.

FIG. 22 is a view for describing a production method of the secondembodiment.

FIG. 23 is a view for describing a production method of the ninthembodiment.

FIG. 24 is a block diagram illustrating a configuration example of animaging apparatus as an electronic device according to an embodiment ofthe present disclosure.

DESCRIPTION OF EMBODIMENTS

The following is a description of modes (hereinafter referred to asembodiments) for carrying out the present disclosure. Description willbe made in the following order.

1. Schematic Configuration Example of a Solid-State Imaging Element

2. Phase Difference Pixel of a First Embodiment (configuration in whicha shape of a lower electrode is changed)

3. Phase Difference Pixel of a Second Embodiment (configuration in whicha lower electrode for discharge is included)

4. Phase Difference Pixel of a Third Embodiment (configuration in whichan interlayer film is formed between a photoelectric conversion film anda lower electrode)

5. Phase Difference Pixel of a Fourth Embodiment (modified example ofthe first embodiment)

6. Phase Difference Pixel of a Fifth Embodiment (modified example of thesecond embodiment)

7. Phase Difference Pixel of a Sixth Embodiment (modified example of thethird embodiment)

8. Phase Difference Pixel of a Seventh Embodiment (configuration inwhich a light shielding film is included on the photodiode)

9. Phase Difference Pixel of an Eighth Embodiment (configuration inwhich a photodiode region is changed)

10. Phase Difference Pixel of a Ninth Embodiment (first configuration inwhich a light shielding film is formed on the photoelectric conversionfilm)

11. Phase Difference Pixel of a Tenth Embodiment (second configurationin which a light shielding film is formed on the photoelectricconversion film)

12. Phase Difference Pixel of an Eleventh Embodiment (firstconfiguration in which a phase difference signal is generated byinfrared light)

13. Phase Difference Pixel of a Twelfth Embodiment (second configurationin which a phase difference signal is generated by infrared light)

14. Production Method of the First Embodiment

15. Production Method of the Second Embodiment

16. Production Method of the Ninth Embodiment

17. Arrangement Example of a Light Shielding Film

18. Application Example for an Electronic device

<1. Schematic Configuration Example of a Solid-State Imaging Element>

FIG. 1 depicts a schematic configuration of a solid-state imagingelement according to an embodiment of the present disclosure.

The solid-state imaging element 1 in FIG. 1 includes a pixel array unit3, in which pixels 2 are two-dimensionally arranged in a matrix on asemiconductor substrate 12 including, for example, silicon (Si) as asemiconductor, and a peripheral circuit unit which is in a periphery ofthe pixel array unit 3. The peripheral circuit unit includes a verticaldrive circuit 4, a column signal processing circuit 5, a horizontaldrive circuit 6, an output circuit 7, a control circuit 8, and the like.

In the pixel array unit 3, as the pixels 2 are arrangedtwo-dimensionally in a matrix, there is a normal pixel 2X that generatesan image generation signal and there is a phase difference pixel 2P thatgenerates a focus detection signal. The phase difference pixel 2P mayalso be referred to as a phase difference detection pixel 2P. Inaddition, the phase difference pixel 2P is divided into a phasedifference pixel 2P_(A) of a type A and a phase difference pixel 2P_(B)of a type B. The phase difference pixel 2P_(A) of the type A and thephase difference pixel 2P_(B) of the type B may each be referred to asfirst and second phase difference detection pixels.

The phase difference pixel 2P_(A) of the type A and the phase differencepixel 2P_(B) of the type B are configured to have asymmetric sensitivityto an incident angle of light, and are arranged in a pair on the pixelarray unit 3. For example, in a case where a shielding direction is aright-left direction (horizontal direction), compared to the normalpixel 2X, the phase difference pixel 2P_(A) of the type A is a pixel inwhich a right half of a light receiving surface of a photoelectricconversion unit (such as photodiode) is shielded, and the phasedifference pixel 2P_(B) of the type B is a pixel in which a left half isshielded.

In the pixel array unit 3, a portion of the normal pixels 2X, which aretwo-dimensionally arranged, is replaced by the phase difference pixels2P_(A) or the phase difference pixels 2P_(B). In the example in FIG. 1,the phase difference pixel 2P_(A) and the phase difference pixel 2P_(B)are arranged in a horizontal direction, but a pair of the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B) isarranged arbitrarily and may be arranged, for example, in a verticaldirection.

Between a pixel signal from the type A and a pixel signal from the typeB, a shift of an image is generated due to a difference in the positionof the openings. For example, in a case where an opening direction is aright-left direction (horizontal direction), compared to the normalpixel 2X, the phase difference pixel 2P_(A) of the type A is a pixel inwhich a left half of a light receiving surface of a photoelectricconversion unit (such as photodiode) is open, and the phase differencepixel 2P_(B) of the type B is a pixel in which a right half is open.Based on the shift of an image, a phase shift amount is calculated todetermine an amount of defocusing, or a defocusing amount, and aphotographing lens is adjusted (moved), whereby autofocus can beperformed.

The pixel 2 includes a photodiode as a photoelectric conversion elementand a plurality of pixel transistors (so-called MOS transistor). Theplurality of pixel transistors includes, for example, four MOStransistors such as a transfer transistor, a selection transistor, areset transistor, and an amplifier transistor.

Also, the pixels 2 may have a shared pixel structure. The shared pixelstructure may include a plurality of photodiodes, a plurality oftransfer transistors, one shared floating diffusion (floating diffusionregion), and each of other shared pixel transistors. That is, in theshared pixel, the photodiodes and the transfer transistors, whichconfigure a plurality of unit pixels, share each of the other pixeltransistors.

The control circuit 8 receives an input clock and data to instruct anoperation mode and the like, and outputs data such as internalinformation of the solid-state imaging element 1. That is, based on avertical synchronizing signal, a horizontal synchronizing signal, and amaster clock, the control circuit 8 generates a clock signal and acontrol signal which are the bases of operations of the vertical drivecircuit 4, the column signal processing circuit 5, and the horizontaldrive circuit 6. Then, the control circuit 8 outputs the generated clocksignal and control signal to the vertical drive circuit 4, the columnsignal processing circuit 5, horizontal drive circuit 6, or the like.

The vertical drive circuit 4 includes, for example, a shift register.The vertical drive circuit 4 selects pixel drive wiring 10 and supplies,to the selected pixel drive wiring 10, a pulse to drive the pixels 2 anddrives the pixels 2 in a row unit. That is, the vertical drive circuit 4selects and scans, serially in a vertical direction in a row unit, eachof the pixels 2 in the pixel array unit 3. Then, the vertical drivecircuit 4 supplies, to the column signal processing circuit 5 through avertical signal line 9, a pixel signal based on signal charge generated,according to the quantity of received light, in a photoelectricconversion unit of each of the pixels 2.

The column signal processing circuit 5 is arranged at each column of thepixels 2, and performs, for each pixel column, signal processing, suchas noise removal, on the signals output by the pixels 2 in one row. Forexample, the column signal processing circuit 5 performs signalprocessing such as correlated double sampling (CDS) to remove uniquefixed pattern noise of a pixel, and AD conversion.

The horizontal drive circuit 6 includes, for example, a shift register.The horizontal drive circuit 6 serially outputs a horizontal scanningpulse to serially select each of the column signal processing circuits5, and makes each of the column signal processing circuits 5 output apixel signal to a horizontal signal line 11.

The output circuit 7 performs signal processing on the signals seriallysupplied by the column signal processing circuits 5 through thehorizontal signal line 11, and outputs the processed signals. Forexample, the output circuit 7 may only perform buffering, or may performadjustment of a black level, correction of column variation, variouskinds of digital signal processing, and the like. The input/outputterminal 13 exchanges signals with an external unit.

The solid-state imaging element 1 may be configured as a CMOS imagesensor called a column AD type, in which a column signal processingcircuit 5 to perform CDS processing and AD conversion processing isarranged at each pixel column.

<2. Phase Difference Pixel of a First Embodiment>

In the following, sectional configurations of the normal pixel 2X, thephase difference pixel 2P_(A), and the phase difference pixel 2P_(B) ofthe solid-state imaging element 1 will be described in detail.

FIG. 2 illustrates sectional configurations of the normal pixel 2X, thephase difference pixel 2P_(A), and the phase difference pixel 2P_(B) ofthe solid-state imaging element 1 in FIG. 1; FIG. 1 also illustrates aphase difference pixel 2P of the first embodiment.

Note that in FIG. 2, as a matter of convenience, the normal pixel 2X,the phase difference pixel 2P_(B), and the phase difference pixel 2P_(A)are aligned and arranged serially from a left side in a horizontaldirection (right-left direction).

In the description of FIG. 2, first, a structure of the normal pixel 2Xwill be described, and then, the phase difference pixel 2P_(A) and thephase difference pixel 2P_(B) will be described with respect to a partdifferent from the normal pixel 2X.

In a first conductivity type (such as p-type) semiconductor region 41 ofthe semiconductor substrate 12, second conductivity type (such asn-type) semiconductor regions 42 and 43 are laminated and formed in adepth direction. Thus, photodiodes PD1 and PD2 of p-n junction areformed in the depth direction. The photodiode PD1, including thesemiconductor region 42 as a charge accumulation region is an inorganicphotoelectric conversion unit configured to receive and tophotoelectrically convert blue light. The photodiode PD2, including thesemiconductor region 43 as a charge accumulation region is an inorganicphotoelectric conversion unit configured to receive and tophotoelectrically convert red light.

On a surface side (lower side in the drawing) of the semiconductorsubstrate 12, a plurality of pixel transistors are formed, for example,to read charge accumulated in the photodiodes PD1 and PD2. In addition,at the surface side (lower side in the drawing) of the semiconductorsubstrate 12, a multi-layer wiring layer 44 including a plurality ofwiring layers and interlayer insulating films is formed. Note that inFIG. 2, the multi-layer wiring layer 44 is not illustrated in detail.

In the semiconductor substrate 12, a conductive plug 46 is formed totake out the charge converted photoelectrically in an organicphotoelectric conversion film 52, which will be described later. Theconductive plug 46 is formed at a side of the multi-layer wiring layer44 and penetrates (semiconductor region 41) the semiconductor substrate12. At an outer periphery of the conductive plug 46, an insulating film47, such as SiO₂ or SiN, is formed to control a short-circuit with thesemiconductor region 41.

The conductive plug 46 is connected, by metal wiring 48 formed in themulti-layer wiring layer 44, to a floating diffusion unit (FD unit) 49formed of the second conductivity type (such as n-type) in the firstconductivity type (such as p-type) semiconductor region in thesemiconductor substrate 12. The FD unit 49 is a region configured totemporally hold the charge photoelectrically converted in the organicphotoelectric conversion film 52 until the charge is read.

At an interface of a rear surface side (upper side in the drawing) ofthe semiconductor substrate 12, for example, a transparent insulatingfilm 51 including two or three layers of a hafnium oxide (HfO2) film anda silicon oxide film is formed.

On an upper side of the transparent insulating film 51, the organicphotoelectric conversion film 52 is arranged, the organic photoelectricconversion film 52 being sandwiched by a lower electrode 53 a and anupper electrode 53 b. The lower electrode 53 a is on a lower side of theorganic photoelectric conversion film 52 and the upper electrode 53 b ison an upper side thereof. The organic photoelectric conversion film 52,the lower electrode 53 a, and the upper electrode 53 b configure anorganic photoelectric conversion unit. The organic photoelectricconversion film 52 is formed as a film to convert green wavelength lightphotoelectrically, and includes, for example, an organic photoelectricconversion material which includes rhodamine-based pigment,merocyanine-based pigment, quinacridone, or the like. The lowerelectrode 53 a and the upper electrode 53 b include, for example, anindium tin oxide (ITO) film, an indium zinc oxide film, or the like.

Note that in a case where the organic photoelectric conversion film 52is configured to convert red wavelength light photoelectrically, theorganic photoelectric conversion film 52 may include, for example, anorganic photoelectric conversion material including phthalocyanine-basedpigment. Also, in a case where the organic photoelectric conversion film52 is configured to convert blue wavelength light photoelectrically, theorganic photoelectric conversion film 52 may include an organicphotoelectric conversion material including coumarin-based pigment,tris-8-hydroxyquinoline Al (Alq3), merocyanine-based pigment, or thelike.

While the upper electrode 53 b is formed on a whole surface and iscommon to all pixels, the lower electrode 53 a is formed in a pixelunit. The lower electrode 53 a is connected to the conductive plug 46 ofthe semiconductor substrate 12 by a metal wiring 54 which penetrates thetransparent insulating film 51. The metal wiring 54 includes a materialsuch as tungsten (W), aluminum (Al), or copper (Cu). The metal wiring 54is formed in the transparent insulating film 51 also in a planardirection at a predetermined depth, and is also used as a lightshielding film 55 between pixels to control incidence of light to anadjacent pixel. For example, the light shielding film 55 may preventlight from one pixel from reaching another pixel.

On an upper surface of the upper electrode 53 b, a high refractive indexlayer 56 is formed by an inorganic film such as a silicon nitride film(SiN), a silicon oxynitride film (SiON), or a silicon carbide (SiC).Also, on the high refractive index layer 56, an on-chip lens 57 isformed. An example of a material of the on-chip lens 57 includes asilicon nitride film (SiN), and a resin material such as styrene-basedresin, acrylic resin, styrene-acrylic copolymer resin, or siloxane-basedresin. In the present pixel structure, a distance between the organicphotoelectric conversion film 52 and the on-chip lens 57 becomes close,whereby the phase difference pixels 2P_(A) and 2P_(B) have low lightincident angle dependency. Thus, the high refractive index layer 56makes the angle of refraction large and improves light-condensingefficiency.

The normal pixel 2X is configured in such a manner.

Thus, the solid-state imaging element 1 in which the normal pixels 2Xare arranged two-dimensionally is a CMOS solid-state imaging element ofa rear surface irradiation type, in which light enters from the rearsurface side, which is the opposite side of the surface side, on which apixel transistor is formed, of the semiconductor substrate 12.

Also, the solid-state imaging element 1 is a solid-state imaging elementof a longitudinal-direction spectral type. The solid-state imagingelement 1 photoelectrically converts the green light in the organicphotoelectric conversion film 52 formed on the upper side of thesemiconductor substrate (silicon layer) 12 and photoelectricallyconverts the blue and red light in the photodiodes PD1 and PD2 in thesemiconductor substrate 12.

Next, structures of the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B) will be described. Note that in the descriptionof the structures of the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B), a part different from the normal pixel 2X willbe described.

In the phase difference pixel 2P_(A) and the phase difference pixel2P_(B), a photoelectric conversion region that includes the organicphotoelectric conversion film 52 is modified from that in the normalpixel 2X. Thus, the phase difference pixels are realized without using alight shielding film.

That is, a photoelectric conversion region that includes the organicphotoelectric conversion film 52 is a region sandwiched by a lowerelectrode 53 c on the lower side of the organic photoelectric conversionfilm 52 and the upper electrode 53 b on the upper side thereof. In eachof the phase difference pixel 2P_(A) and the phase difference pixel2P_(B), a formed region (shape) of the lower electrode 53 c is differentfrom that of the lower electrode 53 a of the normal pixel 2X.

In a lower part of the sectional structure views of the phase differencepixel 2P_(A) and the phase difference pixel 2P_(B) in FIG. 2, planeviews illustrating the photoelectric conversion regions thereof areillustrated.

To a substantially right half region of the lower electrode 53 c of thephase difference pixel 2P_(A), an opening 61 is provided. To asubstantially left half region of the lower electrode 53 c of the phasedifference pixel 2P_(B), an opening 61 is provided.

As described above, in each of the phase difference pixel 2P_(A) and thephase difference pixel 2P_(B), the photoelectric conversion regionincluding the organic photoelectric conversion film 52, is the regionsandwiched by the lower electrode 53 c and the upper electrode 53 b.Thus, an effect similar to that obtained by forming a light shieldingfilm at the opening 61 of the lower electrode 53 c is obtained. That is,by the structures of the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B) illustrated in FIG. 2, G-signals for focusdetection, which have an asymmetric sensitivity to a light incidentangle, can be generated.

In such a manner, in the phase difference pixel 2P of the firstembodiment, the photoelectric conversion region that includes theorganic photoelectric conversion film 52 is modified from that in thenormal pixel 2X, whereby the phase difference pixels are realizedwithout using a light shielding film.

Thus, according to the phase difference pixel 2P of the firstembodiment, since it is not necessary to form a light shielding film onan upper surface of the organic photoelectric conversion film 52, it ispossible to realize a phase difference pixel in the solid-state imagingelement 1 of a longitudinal-direction spectral type without increasingthe number of processes and/or the number of steps in a manufacturingprocess.

Note that in the pixel structures illustrated in FIG. 2, since the greenlight is photoelectrically converted in the organic photoelectricconversion film 52, the G-signal output by the phase difference pixel 2Pis used as a focus detection signal. However, the color of lightconverted photoelectrically in the organic photoelectric conversion film52 can be arbitrarily selected. That is, in the solid-state imagingelement of a longitudinal-direction spectral type, the color of lightphotoelectrically converted in the organic photoelectric conversion film52 formed on the upper side of the semiconductor substrate 12 can bearbitrarily determined such that the color of light photoelectricallyconverted in the organic photoelectric conversion film 52 may be green,red, blue, or the like. Also, the color of light photoelectricallyconverted in the photodiodes PD1 and PD2 in the semiconductor substrate12 can be arbitrarily determined.

<3. Phase Difference Pixel of a Second Embodiment>

Next, a phase difference pixel 2P of the second embodiment will bedescribed with reference to FIG. 3.

In FIG. 3, similarly to FIG. 2, sectional configurations of a normalpixel 2X, a phase difference pixel 2P_(A), a phase difference pixel2P_(B), and a plane view in a planar direction of a layer, in which alower electrode 53 c is formed, are illustrated.

In the description of FIG. 3 to FIG. 13, the same reference charactersare assigned to parts corresponding to the other embodiments which havebeen described and the description thereof has been omitted.

The second embodiment is similar to the first embodiment in that aphotoelectric conversion region that includes an organic photoelectricconversion film 52 is modified from that in the normal pixel 2X torealize a phase difference pixel.

However, in the second embodiment, as illustrated in the plane view inFIG. 3, a lower electrode 71 is formed in a portion of which is theopening 61 in the first embodiment.

Also, as illustrated in the sectional configuration view of FIG. 3, asemiconductor region 72 of a first conductivity type is formed at aninterface, on a side of a transparent insulating film 51, in a firstconductivity type semiconductor region 41 in a semiconductor substrate12, and the semiconductor region 72 and the lower electrode 71 areconnected to each other by metal wiring 73. The metal wiring 73 includesa material which is the same or similar to that of metal wiring 54. Thesemiconductor region 72 is set at GND potential.

In other words, in the second embodiment in FIG. 3, the lower electrodein the phase difference pixel 2P is divided into a lower electrode 53 cand the lower electrode 71. Then, a signal from the lower electrode 53 cis output as a focus detection signal, to a FD unit 49, through themetal wiring 54 and a conductive plug 46. A signal from the lowerelectrode 71 is discharged as an unnecessary signal, through the metalwiring 73, to the semiconductor region 72 at the GND potential.

By forming the lower electrode 71 at a region which is not used as afocus detection signal and further removing and/or discharging such asignal, unnecessary charge is prevented from being mixed into the lowerelectrode 53 c and from being output as a focus detection signal. Thus,an accuracy of a phase difference detection signal may be improved.

Also, in the phase difference pixel 2P of the second embodimentillustrated in FIG. 3, it is not necessary to form a light shieldingfilm at an upper surface of the organic photoelectric conversion film52. Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or the number of steps requiredduring a manufacturing process.

<4. Phase Difference Pixel of a Third Embodiment>

Next, a phase difference pixel 2P of the third embodiment will bedescribed with reference to FIG. 4.

The third embodiment is similar to the first embodiment in that aphotoelectric conversion region that includes the organic photoelectricconversion film 52 is modified from that in a normal pixel 2X to realizea phase difference pixel. However, a manner of forming the photoelectricconversion region is different from that of the first embodiment.

In the third embodiment, on a lower side of the organic photoelectricconversion film 52, a lower electrode 53 a, which is the same as that ofthe normal pixel 2X, is formed instead of the lower electrode 53 c.Then, an interlayer film 81 is provided, utilizing a material which isthe same as that of a transparent insulating film 51, between theorganic photoelectric conversion film 52 and the lower electrode 53 a.Thus, a photoelectric conversion region in the phase difference pixel 2Pis modified from that of the normal pixel 2X.

The photoelectric conversion region is a region in which the organicphotoelectric conversion film 52 is directly in contact with both of thelower electrode 53 a and an upper electrode 53 b. In a phase differencepixel 2P_(A), in a left half region thereof, the lower electrode 53 a isin contact with the organic photoelectric conversion film 52, and in aright half region thereof, the lower electrode 53 a is not in contactwith the organic photoelectric conversion film 52 due to the interlayerfilm 81.

On the other hand, in a phase difference pixel 2P_(B), in a right halfregion thereof, the lower electrode 53 a is in contact with the organicphotoelectric conversion film 52, and in a left half region thereof, thelower electrode 53 a is not in contact with the organic photoelectricconversion film 52 due to the interlayer film 81.

Thus, between the phase difference pixel 2P_(A) and the phase differencepixel 2P_(B), contact regions of the lower electrode 53 a and theorganic photoelectric conversion film 52 in the pixels are different.

In each of the plane views, which are illustrated in a lower part of thesectional structure view and respectively illustrate photoelectricconversion regions of the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B), a region at which the interlayer film 81 isformed is illustrated as an opening 82.

In such a pixel structure, it is possible to obtain an effect which issimilar to that obtained by forming a light shielding film at theopening 82. Thus, in the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B), G-signals for focus detection, which haveasymmetric sensitivity to a light incident angle, can be generated.

In addition, in the phase difference pixel 2P of the third embodiment asillustrated in FIG. 4, it is not necessary to form a light shieldingfilm at an upper surface of the organic photoelectric conversion film52. Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or without increasing the numberof steps during a manufacturing process.

<5. Phase Difference Pixel of a Fourth Embodiment>

Next, a phase difference pixel 2P of the fourth embodiment will bedescribed with reference to FIG. 5.

The phase difference pixel 2P of the fourth embodiment illustrated inFIG. 5 is a modified example of the first embodiment illustrated in FIG.2.

That is, the fourth embodiment is similar to the first embodiment inthat regions of lower electrodes 53 c are different between a phasedifference pixel 2P_(A) and a phase difference pixel 2P_(B) to generatefocus detection signals having asymmetric sensitivity to a lightincident angle.

For example, while each of the pixels 2 receives all of the red (R),green (G), and blue (B) wavelength light in the first embodiment, eachpixel 2 receives the red (R), green (G), or blue (B) wavelength light inthe fourth embodiment.

Specifically, the organic photoelectric conversion film 52, whichphotoelectrically converts the green wavelength light in the firstembodiment in FIG. 2, is replaced with an organic photoelectricconversion film 91 which photoelectrically converts all of the red (R),green (G), and blue (B) wavelength light as illustrated in the fourthembodiment in FIG. 5. Also, in a semiconductor substrate 12, aphotodiode PD1 configured to receive blue light and a photodiode PD2configured to receive red light are not provided.

On the other hand, in the fourth embodiment in FIG. 5, between a highrefractive index layer 56 and an on-chip lens 57, a color filter 92 topass the red (R), green (G), or blue (B) wavelength light is providedfor each pixel.

Thus, only the red (R), green (G), or blue (B) wavelength light whichhas passed through the color filter 92 reaches the organic photoelectricconversion film 91, whereby each of the pixels 2 receives the red (R),green (G), or blue (B) wavelength light.

In the example in FIG. 5, a normal pixel 2X on a left side receives thegreen wavelength light. The phase difference pixel 2P_(B) in the middlereceives the red wavelength light. The phase difference pixel 2P_(A) ona right side receives the blue wavelength light. However, the fourthembodiment is not limited to this example. For example, the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B) receivethe light of the same wavelength (color).

Also in the phase difference pixel 2P of the fourth embodiment asillustrated in FIG. 5, it is not necessary to form a light shieldingfilm at an upper surface of the organic photoelectric conversion film91. Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or increasing the number of stepsduring a manufacturing process.

Note that the example in FIG. 5 is an example of a solid-state imagingelement of a rear surface irradiation type. However, the pixel structureof the fourth embodiment can also be applied to a solid-state imagingelement of a surface irradiation type.

<6. Phase Difference Pixel of a Fifth Embodiment>

Next, a phase difference pixel 2P of the fifth embodiment will bedescribed with reference to FIG. 6.

The phase difference pixel 2P of the fifth embodiment illustrated inFIG. 6 is a modified example of the second embodiment illustrated inFIG. 3.

That is, the fifth embodiment is similar to the second embodiment inthat formed regions of lower electrodes 53 c are different between aphase difference pixel 2P_(A) and a phase difference pixel 2P_(B), andfurther that a lower electrode 71 is provided to discharge anunnecessary signal, through metal wiring 73, to a semiconductor region72 at GND potential.

In the fifth embodiment, similar to the fourth embodiment illustrated inFIG. 5, each pixel 2 receives red (R), green (G), or blue (B) wavelengthlight.

That is, the organic photoelectric conversion film 52, whichphotoelectrically converts the green wavelength light, in the secondembodiment is replaced with an organic photoelectric conversion film 91,which photoelectrically converts all of the red (R), green (G), and blue(B) wavelength light, in the fifth embodiment. Also, in a semiconductorsubstrate 12, a photodiode PD1 configured to receive blue light and aphotodiode PD2 configured to receive red light are not provided.

Also, in the fifth embodiment, between a high refractive index layer 56and an on-chip lens 57, a color filter 92 to pass the red (R), green(G), or blue (B) wavelength light is provided for each pixel.

Thus, only the red (R), green (G), or blue (B) wavelength light whichhas passed through the color filter 92 reaches the organic photoelectricconversion film 91, whereby each of the pixels 2 receives the red (R),green (G), or blue (B) wavelength light.

In the example in FIG. 6, a normal pixel 2X on a left side receives thegreen wavelength light. The phase difference pixel 2P_(B) in the middlereceives the red wavelength light. The phase difference pixel 2P_(A) ona right side receives the blue wavelength light. However, the fifthembodiment is not limited to this example. For example, the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B) receivethe light of the same wavelength (color).

Also in the phase difference pixel 2P of the fifth embodiment asillustrated in FIG. 6, it is not necessary to form a light shieldingfilm at an upper surface of the organic photoelectric conversion film91. Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or the number of steps in amanufacturing process.

Note that the example in FIG. 6 is an example of a solid-state imagingelement of a rear surface irradiation type. However, the pixel structureof the fifth embodiment can also be applied to a solid-state imagingelement of a surface irradiation type.

<7. Phase Difference Pixel of a Sixth Embodiment>

Next, a phase difference pixel 2P of the sixth embodiment will bedescribed with reference to FIG. 7.

The phase difference pixel 2P of the sixth embodiment illustrated inFIG. 7 is a modified example of the third embodiment illustrated in FIG.4.

That is, the sixth embodiment is similar to the third embodiment in thatin a phase difference pixel 2P_(A) and a phase difference pixel 2P_(B),an interlayer film 81 is provided between an organic photoelectricconversion film 52 and a lower electrode 53 a to generate one or morefocus detection signals having asymmetric sensitivity to a lightincident angle.

On the other hand, in the sixth embodiment, similarly to the fourthembodiment illustrated in FIG. 5, each pixel 2 receives red (R), green(G), or blue (B) wavelength light.

That is, the organic photoelectric conversion film 52, whichphotoelectrically converts the green wavelength light in the thirdembodiment is replaced with an organic photoelectric conversion film 91,which photoelectrically converts all of the red (R), green (G), and blue(B) wavelength light, in the sixth embodiment. Also, in a semiconductorsubstrate 12, a photodiode PD1 configured to receive blue light and aphotodiode PD2 configured to receive red light are not provided.

Also, in the sixth embodiment, between a high refractive index layer 56and an on-chip lens 57, a color filter 92 to pass the red (R), green(G), or blue (B) wavelength light is provided for each pixel.

Thus, only the red (R), green (G), or blue (B) wavelength light whichhas passed through the color filter 92 reaches the organic photoelectricconversion film 91, whereby each of the pixels 2 receives the red (R),green (G), or blue (B) wavelength light.

In the example in FIG. 7, a normal pixel 2X on a left side receives thegreen wavelength light. The phase difference pixel 2P_(B) in the middlereceives the red wavelength light. The phase difference pixel 2P_(A) ona right side receives the blue wavelength light. However, the sixthembodiment is not limited to this example. For example, the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B) mayreceive the light of the same wavelength (color).

Also in the phase difference pixel 2P of the sixth embodimentillustrated in FIG. 7, it is not necessary to form a light shieldingfilm at an upper surface of the organic photoelectric conversion film91. Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or increasing the number of stepsin a manufacturing process.

Note that the example in FIG. 7 is an example of a solid-state imagingelement of a rear surface irradiation type. However, the pixel structureof the sixth embodiment can also be applied to a solid-state imagingelement of a surface irradiation type.

Conclusion of the First to Sixth Embodiments

In the first to sixth embodiments, a photoelectric conversion region ofthe phase difference pixel 2P having an organic photoelectric conversionfilm 52 is modified from that of the normal pixel 2X, such that focusdetection signals having asymmetric sensitivity to a light incidentangle may be generated.

In a solid-state imaging element of a longitudinal-direction spectraltype in which green light is photoelectrically converted in an organicphotoelectric conversion film 52 at an upper side of a semiconductorsubstrate 12 and blue and red light is photoelectrically converted inphotodiodes PD1 and PD2 in the semiconductor substrate 12, when a lightshielding film is formed at an upper part of the organic photoelectricconversion film 52, a process to form the light shielding film is newlyadded. Also, for a process of forming a color filter, an on-chip lens,or the like, it is necessary to remove a step in the light shieldingfilm.

In the first to sixth embodiments, a photoelectric conversion region ofa phase difference pixel 2P that includes an organic photoelectricconversion film 52 is modified from that in the normal pixel 2X, wherebya phase difference pixel is realized without providing a light shieldingfilm on an upper part of the organic photoelectric conversion film 52.

Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or the number of steps in amanufacturing process.

<8. Phase Difference Pixel of a Seventh Embodiment>

Next, the phase difference pixel 2P of the seventh embodiment will bedescribed with reference to FIG. 8.

Also in the description of the seventh embodiment illustrated in FIG. 8,a part different from the first embodiment will be described.

In the seventh embodiment as illustrated in FIG. 8, an organicphotoelectric conversion film 52 is not used as an organic photoelectricconversion layer to generate a focus detection signal. Rather,photodiodes PD1 and PD2 in a semiconductor substrate 12 are used asinorganic photoelectric conversion layers to generate a focus detectionsignal.

Specifically, in a phase difference pixel 2P of the seventh embodiment,similar to a normal pixel 2X, a lower electrode 53 a having no openingis formed on a lower surface of the organic photoelectric conversionfilm 52. Thus, G-signals generated in the normal pixel 2X and the phasedifference pixel 2P are not different from each other.

On the other hand, at each of a phase difference pixel 2P_(A) and aphase difference pixel 2P_(B), a light shielding film 101 that shields aportion of light receiving regions of the photodiodes PD1 and PD2 isnewly provided; such light shielding film 101 may be provided in thesame layer with a light shielding film 55 between pixels, in atransparent insulating film 51.

In FIG. 8, in a lower part of the sectional structure view of the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B), planeviews, each of which illustrates an upper surface of the photodiode PD1,are illustrated.

In the phase difference pixel 2P_(A), the light shielding film 101 isarranged to shield a right half of the photodiode PD1, and in the phasedifference pixel 2P_(B), the light shielding film 101 is arranged toshield a left half of the photodiode PD1. Thus, in the phase differencepixel 2P_(A) and the phase difference pixel 2P_(B), a B-signal and anR-signal for focus detection, which have asymmetric sensitivity to alight incident angle, can be generated. Note that either one of theB-signal and the R-signal may be used as the focus detection signal, orboth the B-signal and the R-signal may be used as the focus detectionsignals.

According to the phase difference pixel 2P of the seventh embodiment, itis not necessary to form a light shielding film on an upper surface ofthe organic photoelectric conversion film 52; thus, it is possible toform the light shielding film 101 in the same process of forming thelight shielding film 55 between pixels. Thus, in a solid-state imagingelement 1 of a longitudinal-direction spectral type, a phase differencepixel can be realized without increasing the number of processes and/orthe number of steps in a manufacturing process.

<9. Phase Difference Pixel of an Eighth Embodiment>

Next, a phase difference pixel 2P of the eighth embodiment will bedescribed with reference to FIG. 9.

In the description of the eighth embodiment illustrated in FIG. 9, apart different from the seventh embodiment illustrated in FIG. 8 will bedescribed.

The eighth embodiment illustrated in FIG. 9 is similar to the seventhembodiment illustrated in FIG. 8 in that an organic photoelectricconversion film 52 is not used as an organic photoelectric conversionlayer to generate a focus detection signal; rather photodiodes PD1 andPD2 in a semiconductor substrate 12 are used as inorganic photoelectricconversion layers to generate a focus detection signal.

On the other hand, while in the seventh embodiment, the light shieldingfilm 101 is provided at the upper surface of the photodiode PD1, thelight shielding film 101 is not provided in the eighth embodiment.Instead, second conductivity type semiconductor regions 111 and 112,which are charge accumulation regions of the photodiodes PD1 and PD2,are formed to be a half of semiconductor regions 42 and 43 of a normalpixel 2X.

Specifically, compared to the normal pixel 2X, the second conductivitytype semiconductor regions 111 and 112 are formed only to a left halfregion in a phase difference pixel 2P_(A). Also, compared to the normalpixel 2X, the second conductivity type semiconductor regions 111 and 112are formed only to a right half region in a phase difference pixel2P_(B).

Since the semiconductor regions 111 and 112 in the semiconductorsubstrate 12 is formed by injecting a second conductivity type (n-type)ion such as As (arsenic), it is possible to form the semiconductorregions 42 and 43 and the semiconductor regions 111 and 112simultaneously by changing ion injection regions from the semiconductorregions 42 and 43 of the normal pixel 2X.

Thus, in the phase difference pixel 2P_(A) and the phase differencepixel 2P_(B), a B-signal and an R-signal for focus detection, which haveasymmetric sensitivity to a light incident angle, can be generated. Notethat either one of the B-signal and the R-signal may be used as thefocus detection signal, or both the B-signal and the R-signal may beused as the focus detection signals.

Conclusion of the Seventh and Eighth Embodiments

In the seventh and eighth embodiments, an organic photoelectricconversion film 52 is not used as an organic photoelectric conversionlayer to generate a focus detection signal. The photodiodes PD1 and PD2in the semiconductor substrate 12 are used as inorganic photoelectricconversion layers to generate a focus detection signal.

In a solid-state imaging element of a longitudinal-direction spectraltype, when a light shielding film is formed at an upper part of anorganic photoelectric conversion film 52, a process of forming the lightshielding film is newly added. Also, for a process of forming a colorfilter, an on-chip lens, or the like, it is desirable to remove a stepin the light shielding film.

On the other hand, in the seventh embodiment, it is not necessary toform a light shielding film on an upper side of the organicphotoelectric conversion film 52, and thus, it is possible to form thelight shielding film 101 in the same process of forming the lightshielding film 55 between pixels. In the eighth embodiment, by changingion injection regions, it is possible to form the semiconductor regions42 and 43 and the semiconductor regions 111 and 112 in the same ioninjection process.

Thus, in a solid-state imaging element 1 of a longitudinal-directionspectral type, a phase difference pixel can be realized withoutincreasing the number of processes and/or the number of steps in amanufacturing process.

<10. Phase Difference Pixel of a Ninth Embodiment>

Next, a phase difference pixel 2P of the ninth embodiment will bedescribed with reference to FIG. 10.

In the description of the ninth embodiment as illustrated in FIG. 10, apart different from the seventh embodiment illustrated in FIG. 8 will bedescribed.

In the seventh embodiment illustrated in FIG. 8, the light shieldingfilms 101 are provided in the transparent insulating film 51 of thephase difference pixel 2P_(A) and the phase difference pixel 2P_(B).Alternatively, or in addition, in the ninth embodiment, a lightshielding film 121 that changes the sensitivity to a light incidentangle is provided in a high refractive index layer 56 under an on-chiplens 57. Specifically, in a phase difference pixel 2P_(A), the lightshielding film 121 is formed to shield a right side of an organicphotoelectric conversion film 52 and photodiodes PD1 and PD2, and in aphase difference pixel 2P_(B), the light shielding film 121 is formed toshield a left side of the organic photoelectric conversion film 52 andphotodiodes PD1 and PD2.

Thus, in the phase difference pixel 2P_(A) and the phase differencepixel 2P_(B), a G-signal, a B-signal and an R-signal for focus detectionhaving different sensitivities to a light incident angle, may begenerated. Note that one or two of the G-signal, the B-signal, and theR-signal may be used as the focus detection signals, or all of theG-signal, the B-signal, and the R-signal may be used as focus detectionsignals.

Also, in FIG. 10, on the right side of a phase difference pixel 2P_(A),a power source supplying unit that supplies a predetermined voltage toan upper electrode 53 b is illustrated.

Specifically, a conductive plug 122 to supply power from the powersource to the upper electrode 53 b of a rear surface side, from amulti-layer wiring layer 44 on a side of a substrate surface (lower sidein the drawing) is formed and penetrates a semiconductor substrate 12.Also, to an outer periphery of the conductive plug 122, an insulatingfilm 123 is formed to control a short-circuit with a semiconductorregion 41.

Also, at the rear surface side of the semiconductor substrate 12, theconductive plug 122 and the upper electrode 53 b are connected to eachother by connection wiring 124. The connection wiring 124 may be formedof a material such as, but not limited to, tungsten (W), aluminum (Al),or copper (Cu).

The light shielding film 121 formed at the phase difference pixel 2P canbe formed in the same process of forming the connection wiring 124 whichsupplies a predetermined voltage to the upper electrode 53 b.

Note that in the example in FIG. 10, the light shielding film 121 andthe upper electrode 53 b are not connected to each other. However, insome embodiments, the light shielding film 121 and the upper electrode53 b are connected in order to increase their electrical stability.

<11. Phase Difference Pixel of a Tenth Embodiment>

Next, a phase difference pixel 2P of the tenth embodiment will bedescribed with reference to FIG. 11.

In the description of the tenth embodiment as illustrated in FIG. 11, apart different from the ninth embodiment illustrated in FIG. 10 will bedescribed.

As illustrated in FIG. 10, each of the pixels 2 receives all of the red(R), green (G), and blue (B) wavelength light; in the tenth embodimentas illustrated in FIG. 11, a color filter 92 is arranged between a highrefractive index layer 56 and an on-chip lens 57, whereby each pixel 2receives the red (R), green (G), or blue (B) wavelength light.

Thus, the color of light photoelectrically converted by an organicphotoelectric conversion film 91 of each of the pixels 2 differsaccording to the color of the provided color filter 92.

Also, in the tenth embodiment, a photodiode PD1 configured to receiveblue light and a photodiode PD2 configured to receive red light are notprovided in the semiconductor substrate 12.

Similar to the ninth embodiment in FIG. 10, light shielding films 121are arranged in the high refractive index layer 56 in such a manner thatthe phase difference pixel 2P_(A) and the phase difference pixel 2P_(B)have a different sensitivity to a light incident angle.

Thus, in each of the phase difference pixel 2P_(A) and the phasedifference pixel 2P_(B), a G-signal, a B-signal or an R-signal for focusdetection can be generated. The G-signal, a B-signal and an R-signalhave different sensitivity to a light incident angle.

Also in FIG. 11, the light shielding film 121 and an upper electrode 53b are not connected to each other. However, in some embodiments, thelight shielding film 121 and the upper electrode 53 b are connected toincrease their electrical stability.

Also, in the example in FIG. 11, the phase difference pixel 2P_(B)receives the red wavelength light and the phase difference pixel 2P_(A)receives the blue wavelength light. However, in some embodiments, thephase difference pixel 2P_(A) and the phase difference pixel 2P_(B) mayreceive light of the same wavelength (color).

Note that the example in FIG. 11 is an example of a solid-state imagingelement of a rear surface irradiation type. However, the pixel structureof the tenth embodiment can also be applied to a solid-state imagingelement of a surface irradiation type.

Conclusion of the Ninth and Tenth Embodiments

In the ninth and tenth embodiments, a light shielding film 121 may beformed at an upper side of an organic photoelectric conversion film 52in the same process of forming connection wiring 124 which supplies apredetermined voltage to an upper electrode 53 b. Thus, in a solid-stateimaging element 1 of a longitudinal-direction spectral type, a phasedifference pixel can be realized without increasing the number ofprocesses and/or increasing the number of steps in a manufacturingprocess.

<12. Phase Difference Pixel of an Eleventh Embodiment>

Next, a phase difference pixel 2P of the eleventh embodiment will bedescribed with reference to FIG. 12.

In the description of the eleventh embodiment illustrated in FIG. 12, apart different from the seventh embodiment illustrated in FIG. 8 will bedescribed.

While in the seventh embodiment illustrated in FIG. 8, each of thepixels 2 receives all of the red (R), green (G), and blue (B) wavelengthlight, in the eleventh embodiment in FIG. 12, each pixel 2 receives thered (R), green (G), or blue (B) wavelength light.

That is, in the eleventh embodiment, in each of a normal pixel 2X, aphase difference pixel 2P_(A), and a phase difference pixel 2P_(B), anorganic photoelectric conversion film 91, which photoelectricallyconverts all of the red (R), green (G), and blue (B) wavelength light,is sandwiched and formed between a lower electrode 53 a and an upperelectrode 53 b.

Also, between a high refractive index layer 56 and an on-chip lens 57, acolor filter 92 to pass the red (R), green (G), or blue (B) wavelengthlight is arranged for each pixel.

Thus, the color of light photoelectrically converted by an organicphotoelectric conversion film 91 of each of the pixels 2 differsaccording to the color of the provided color filter 92.

Also, in the eleventh embodiment, a photodiode PD1 configured to receiveblue light and a photodiode PD2 configured to receive red light are notprovided in a first conductivity type semiconductor region 41 in asemiconductor substrate 12. Instead, by forming a second conductivitytype semiconductor region 131, a photodiode PD3 is formed for eachpixel. Since red (R), green (G), or blue (B) visible light is absorbedin the organic photoelectric conversion film 91, the photodiode PD3functions as an inorganic photoelectric conversion unit whichphotoelectrically converts infrared light.

According to the configuration above, in the eleventh embodiment, ineach of the normal pixel 2X, the phase difference pixel 2P_(A), and thephase difference pixel 2P_(B), the organic photoelectric conversion film91 outputs a red (R), green (G), or blue (B) image generation signal.Thus, in the eleventh embodiment, even in the phase difference pixel2P_(A) and the phase difference pixel 2P_(B), pixel signals which aresimilar to that of the normal pixel 2X may be output, while a phasedifference pixel is generally treated as a defective pixel andcorrection processing is necessary. That is, the phase difference pixel2P_(A) and the phase difference pixel 2P_(B) are not treated as thedefective pixels.

In addition, as a signal for phase difference detection, an outputsignal of the photodiode PD3 which receives and photoelectricallyconverts the infrared light can be used.

Note that as described above, an image generation signal is obtainedfrom the organic photoelectric conversion film 91, and thus, a lightshielding film 101 may be formed on the photodiode PD3 of the normalpixel 2X to generate a phase difference. In this case, since phasedifference information may be obtained from all of the pixels in thepixel array unit 3, a phase difference signal detected in the photodiodePD3 may be used not only for an autofocus control, but also, forexample, for obtaining depth information for 3D image photographing, orthe like.

<13. Phase Difference Pixel of a Twelfth Embodiment>

Next, a phase difference pixel 2P of the twelfth embodiment will bedescribed with reference to FIG. 13.

In the description of the twelfth embodiment illustrated in FIG. 13, apart different from the eleventh embodiment illustrated in FIG. 12 willbe described.

In the twelfth embodiment, similar to the eleventh embodimentillustrated in FIG. 12, each pixel 2 receives red (R), green (G), orblue (B) wavelength light. That is, by a color filter 92 and an organicphotoelectric conversion film 91, each of a normal pixel 2X, a phasedifference pixel 2P_(A), and a phase difference pixel 2P_(B) receivesthe red (R), green (G), or blue (B) wavelength light, and furtheroutputs an image generation signal.

On the other hand, while in the eleventh embodiment as illustrated inFIG. 12, the light shielding film 101 is provided on the upper side ofthe photodiode PD3 of the phase difference pixel 2P, the light shieldingfilm 101 is not provided in the twelfth embodiment. Instead, a secondconductivity type semiconductor region 141, which is a chargeaccumulation region of the photodiode PD3, is formed to be a half of asemiconductor region 131 of the normal pixel 2X.

Specifically, compared to the normal pixel 2X, the second conductivitytype semiconductor region 141 is formed only to a left half region inthe phase difference pixel 2P_(A). Also, compared to the normal pixel2X, the second conductivity type semiconductor region 141 is formed onlyto a right half region in the phase difference pixel 2P_(B).

Since the semiconductor regions 141 in the semiconductor substrate 12 isformed by injecting a second conductivity type (n-type) ion such as As(arsenic), it is possible to form the semiconductor regions 131 and 141simultaneously, by changing an ion injection region from thesemiconductor region 131 of the normal pixel 2X.

According to the configuration above, in the twelfth embodiment, in eachof the normal pixel 2X, the phase difference pixel 2P_(A), and the phasedifference pixel 2P_(B), the organic photoelectric conversion film 91outputs a red (R), green (G), or blue (B) image generation signal. Thus,in the twelfth embodiment, even in the phase difference pixel 2P_(A) andthe phase difference pixel 2P_(B), pixel signals which are similar tothat of the normal pixel 2X can be output. While a phase differencepixel is generally treated as a defective pixel and correctionprocessing is necessary, in at least some embodiments, the phasedifference pixel 2P_(A) and the phase difference pixel 2P_(B) are nottreated as the defective pixels.

Also, as a signal for phase difference detection, an output signal ofthe photodiode PD3 which receives and photoelectrically converts theinfrared light can be used.

Note that as described above, an image generation signal is obtainedfrom the organic photoelectric conversion film 91, and thus, asemiconductor region 141 can be formed instead of the semiconductorregion 131, to detect phase difference, also in the photodiode PD3 ofthe normal pixel 2X. In this case, since phase difference informationcan be obtained from all of the pixels in the pixel array unit 3, aphase difference signal detected in the photodiode PD3 can be used notonly for an autofocus control, but also, for example, for obtainingdepth information for 3D image photographing, or the like.

Conclusion of the Eleventh and Twelfth Embodiments

Although a phase difference pixel is generally treated as a defectivepixel and needs correction processing, according to the eleventh andtwelfth embodiments, since all pixels 2 including a phase differencepixel 2P can output image generation signals, a phase difference pixel2P_(A) and a phase difference pixel 2P_(B) are not treated as thedefective pixels. Thus, correction processing on a phase differencepixel becomes unnecessary, and because the amount of defective pixels donot increase due to the additional phase difference pixels used forphase detection, the quality of an imaged image may increase.

Also, a phase difference signal detected in the photodiode PD3 may beused for an autofocus control, and/or for obtaining depth informationfor 3D image photographing or the like, for example.

<14. Production Method of the First Embodiment>

Next, a production method of the first embodiment illustrated in FIG. 2will be described with reference to FIG. 14 to FIG. 21.

Note that in FIG. 14 to FIG. 21, a production method of producing apower source supplying unit for the upper electrode 53 b, which unit isnot illustrated in FIG. 2, will also be described.

First, as illustrated in FIG. 14A, in a semiconductor region 41 in asemiconductor substrate 12, photodiodes PD1 and PD2, a conductive plug46, an FD unit 49, and a conductive plug 122 and the like to supply apower source to the upper electrode 53 b are formed.

Also, on a surface side (lower side in the drawing) of the semiconductorsubstrate 12, a plurality of pixel transistors, for example, to readcharge accumulated in the photodiodes PD1 and PD2, and a multi-layerwiring layer 44 including a plurality of wiring layers and interlayerinsulating films are formed.

Then, as illustrated in FIG. 14B, at an interface of a rear surface sideof the semiconductor substrate 12, a transparent insulating film 51A isformed having a predetermined thickness.

Next, as illustrated in FIG. 14C, a region, which is connected to theconductive plug 46, of transparent insulating film 51A formed at theinterface of the rear surface side of the semiconductor substrate 12 isopened by lithography.

Then, as illustrated in FIG. 14D, a metal material 201 that includestungsten (W), aluminum (Al), and/or copper (Cu) is formed on a wholeupper side surface of the transparent insulating film 51A; the metalmaterial 201 is additionally formed in the opened engraved part of thetransparent insulating film 51A opened by a lithography process asillustrated in FIG. 14C.

As illustrated in FIG. 15A, patterning is performed by lithography onthe metal material 201 formed on the whole surface on the transparentinsulating film 51A; such a lithography process leaves a region 55.Thus, a light shielding film 55 between pixels is formed.

Then, as illustrated in FIG. 15B, on an upper side of the transparentinsulating film 51A and the light shielding film 55 between pixels, atransparent insulating film 51B is laminated, and then, as illustratedin FIG. 15C, only a region which is connected to the conductive plug 46of the laminated transparent insulating film 51B is opened by thelithography.

After a metal material 202 is formed on a whole upper side surface ofthe transparent insulating film 51B including the opened engraved partof the transparent insulating film 51B as illustrated in FIG. 15D, themetal material 202 on a surface layer is removed by chemical mechanicalpolishing (CMP). Thus, as illustrated in FIG. 16A, metal wiring 54 whichpenetrates the transparent insulating films 51A and 51B is formed.

Then, as illustrated in FIG. 16B, on the transparent insulating film51B, for example, an indium tin oxide (ITO) film 203 is formed, andpatterning is performed thereon by the lithography, with only anintended region being left. That is, on the transparent insulating film51B, a film 203, such as an indium tin oxide (ITO) film, is formed; thefilm 203 then undergoes patterning and lithography processes such that aregion 53 a and 53 c are formed. Thus, as illustrated in FIG. 16C, alower electrode 53 a of a normal pixel 2X and a lower electrode 53 c ofa phase difference pixel 2P are formed.

Then, a transparent insulating film 51C is formed having a predeterminedthickness on the transparent insulating film 51B and the lowerelectrodes 53 a and 53 c as illustrated in FIG. 16D. After thetransparent insulating film 51C has been formed, a portion of thetransparent insulating film 51C is removed, for example, by chemicalmechanical polishing (CMP) until the thickness thereof becomes the sameas or similar to the lower electrode 53 a and the lower electrode 53 c.As a result, and as illustrated in FIG. 17A, the transparent insulatingfilm 51C and the transparent insulating films 51B and 51A, which are thelayers under the transparent insulating film 51C, complete thetransparent insulating film 51 in FIG. 2.

Subsequently, after an organic photoelectric conversion material 204,which photoelectrically converts the green wavelength light, is formedon the upper surfaces of the lower electrodes 53 a and 53 c and thetransparent insulating film 51 as illustrated in FIG. 17B, for example,a film 25, such as an indium tin oxide (ITO) film, is formed thereon, asillustrated in FIG. 17C.

Then, etching is performed with only an intended region being left,whereby an organic photoelectric conversion film 52 and an upperelectrode 53 b which are common to the normal pixel 2X and the phasedifference pixel 2P are completed, as illustrated in FIG. 17D.

Subsequently, as illustrated in FIG. 18A, a high refractive material206A, such as a nitride film, is formed on upper surfaces of the upperelectrode 53 b in a pixel region of a pixel array unit 3 and thetransparent insulating film 51 at an outer peripheral part. Therefractive material 206A becomes a portion of the high refractive indexlayer 56.

Then, as illustrated in FIG. 18B, an opening 207 is formed at a locationwhich becomes a contact unit of the upper electrode 53 b. Additionally,an opening 208 is formed at a location which becomes a contact unit withthe conductive plug 122.

Then, as illustrated in FIG. 19A, after a metal material 209, such astungsten (W), is formed in a conformal manner on an upper surface of thehigh refractive material 206A, to which the contact openings 207 and 208have been formed, patterning is performed in a manner such that theouter peripheral part of the pixel array unit 3 remains. Thus, asillustrated in FIG. 19B, the connection wiring 124 which connects theconductive plug 122 and the upper electrode 53 b is completed.

Then, as illustrated in FIG. 20A, on the high refractive material 206Aand the connection wiring 124, a high refractive material 206B, whichmay be the same material as the high refractive material 206A, isformed. The laminated high refractive material 206A and high refractivematerial 206B configure and/or create the high refractive index layer56.

Next, a resin-based material 210, which is a material of an on-chip lens57, is further formed on an upper surface of the high refractive indexlayer 56 as illustrated in FIG. 20B. After the resin-based material 210is formed as illustrated in FIG. 20B, a photoresist 211 is formed in alens-shape as illustrated in FIG. 21A. Then, by etching back based onthe lens-shaped photoresist 211, the on-chip lens 57 is formed on a topof each of the pixels 2, as illustrated in FIG. 21B.

In the manner above, the pixel structure of the first embodimentillustrated in FIG. 2 may be produced.

<15. Production Method of the Second Embodiment>

Next, a production method of the second embodiment illustrated in FIG. 4will be described with reference to FIG. 22.

A portion of the second embodiment may be produced in a similar manneras described with respect to FIG. 14A to FIG. 16B of the firstembodiment. An ITO film 203 is formed on a whole upper side surface of atransparent insulating film 51B as previously described with respect toFIG. 16B.

Then, patterning is performed, by lithography, on the ITO film 203formed on the transparent insulating film 51B such that only an intendedregion remains. Accordingly, lower electrodes 53 a having the sameshapes are respectively formed for a normal pixel 2X and a phasedifference pixel 2P_(A)s illustrated in FIG. 22A.

Then, as illustrated in FIG. 22B, on the transparent insulating film 51Band the lower electrode 53 a, a transparent insulating film 51C isfurther formed having a predetermined thickness.

Next, as illustrated in FIG. 22C, patterning is performed on aphotoresist 231 based on a formed region of an interlayer film 81. Here,an end surface of the photoresist 231 on which the patterning isperformed is reflowed at a high temperature and is formed to have ataper (tilted surface) shape.

Then, based on the taper (tilted surface) shaped photoresist 231, thetransparent insulating film 51C is etched back, and as illustrated inFIG. 22D, the interlayer film 81 is formed on the lower electrode 53 aof the phase difference pixel 2P.

After the photoresist 231 is removed, the second embodiment can beproduced utilizing processes similar to the processes illustrated in andafter FIG. 17A of the first embodiment, and thus, the descriptionthereof is omitted.

<16. Production Method of the Ninth Embodiment>

Next, a production method of the ninth embodiment illustrated in FIG. 10will be described with reference to FIG. 23.

A portion of the ninth embodiment may be produced in a similar manner tothat of FIG. 14A to 19A of the first embodiment. However, as can be seenfrom the comparison between FIG. 19A and FIG. 23A, in the ninthembodiment illustrated in FIG. 23A, for a phase difference pixel 2P_(A)lower electrode 53 a having the same shape with that of a normal pixel2X is formed instead of the lower electrode 53 c.

As illustrated in FIG. 23B, patterning is performed on a metal material209 by lithography such that an intended region remains. Thus,connection wiring 124 is formed, and light shielding films 121 areformed respectively at predetermined regions in a phase difference pixel2P_(A) and a phase difference pixel 2P_(B).

Processes after the intermediate state illustrated in FIG. 23B issimilar to those illustrated in and after FIG. 20A of the firstembodiment, and thus, the description thereof is omitted.

<Application Example to Electronic Device>

Application of a technique of the present disclosure is not limited to asolid-state imaging element. That is, the technique of the presentdisclosure is applicable to a general electronic device using asolid-state imaging element as an image reading unit (photoelectricconversion unit). For example, the general electronic device may be animaging apparatus such as a digital still camera or a video camera, aportable terminal apparatus including an imaging function, or a copierusing a solid-state imaging element as an image reading unit. Thesolid-state imaging element may be formed as one chip, or may be amodule including an imaging function, in which an imaging unit and asignal processing unit and/or an optical system are packaged together.

FIG. 24 is a block diagram illustrating a configuration example of animaging apparatus as an electronic device according to an embodiment ofthe present disclosure.

An imaging apparatus 300 in FIG. 24 includes an optical unit 301including a lens group and the like, a solid-state imaging element(imaging device) 302 in which a configuration of the solid-state imagingelement 1 in FIG. 1 is employed, and a digital signal processor (DSP)circuit 303 which may be a camera signal processing circuit. The imagingapparatus 300 also includes a frame memory 304, a display unit 305, arecording unit 306, an operation unit 307, and a power source unit 308.The DSP circuit 303, the frame memory 304, the display unit 305, therecording unit 306, the operation unit 307, and the power source unit308 are connected mutually through a bus line 309.

The optical unit 301 receives incident light (image light) from anobject and forms an image on an imaging surface of the solid-stateimaging element 302. The solid-state imaging element 302 converts, in apixel unit, the quantity of incident light of the image formed on theimaging surface by the optical unit 301 into an electric signal, andoutputs the signal as a pixel signal. As the solid-state imaging element302, the solid-state imaging element 1 in FIG. 1, that is, a solid-stateimaging element of a longitudinal-direction spectral type including aphase difference pixel 2P and a normal pixel 2X, can be used.

The display unit 305 includes, for example, a panel-type displayapparatus such as a liquid crystal panel, or an organic electroluminescence (EL) panel, and displays a moving image or a still imageimaged in the solid-state imaging element 302. The recording unit 306records a moving image or a still image imaged in the solid-stateimaging element 302 into a recording medium such as a hard disk or asemiconductor memory.

Following an operation by a user, the operation unit 307 issues anoperation instruction with respect to various functions which theimaging apparatus 300 is configured to perform. The power source unit308 arbitrarily supplies various power sources, which become operationpower sources of the DSP circuit 303, the frame memory 304, the displayunit 305, the recording unit 306, and the operation unit 307, to theseobjects of the supply.

As described above, by employing, as the solid-state imaging element302, the solid-state imaging element 1 according to each of theembodiments, it becomes possible to realize a phase difference pixelwithout increasing the number of processes. Thus, also in the imagingapparatus 300, such as a video camera, a digital still camera, and acamera module for a mobile device such as a mobile phone, it becomespossible to enhance quality of an imaged image.

Embodiments of the present disclosure are not limited to the abovedescribed embodiments, and various modifications may be made theretowithout departing from the scope of the present disclosure.

In each of the embodiments, a solid-state imaging element of alongitudinal-direction spectral type, which includes one organicphotoelectric conversion layer (organic photoelectric conversion film52) on an upper layer of a semiconductor substrate 12 and two inorganicphotoelectric conversion layers (photodiode PD1 and PD2) in thesemiconductor substrate 12, has been described.

However, the technique of the present disclosure is similarly applicableto a solid-state imaging element of a longitudinal-direction spectraltype, which includes two organic photoelectric conversion layers on anupper layer of a semiconductor substrate 12 and one inorganicphotoelectric conversion layer in the semiconductor substrate 12.

Also, in each of the embodiments, an example of a phase difference pixel2P having a right-left direction (horizontal direction) as a shieldingdirection has been described. However, the shielding direction is notlimited to the right-left direction (horizontal direction), and may bean upward-downward direction (vertical direction) or a diagonaldirection.

Moreover, in each of the embodiments, an upper electrode 53 b is formedon a whole surface and is common to all pixels, and a lower electrode 53a is formed in a pixel unit, the upper electrode 53 b and the lowerelectrode 53 a configuring an organic photoelectric conversion unit.However, the upper electrode 53 b may be formed in a pixel unit and thelower electrode 53 a may be formed on a whole surface and common to allpixels.

In each of the described examples, a solid-state imaging element, inwhich a first conductivity type is a p-type, a second conductivity typeis an n-type, and an electron is signal charge, has been described.However, a technique of the present disclosure can also be applied to asolid-state imaging element in which a hole is signal charge. That is,the semiconductor regions described above can be configured by theopposite conductivity types, with the first conductivity type being then-type and the second conductivity type being the p-type.

In addition, the technique of the present disclosure is applicable notonly to a solid-state imaging element which detects a distribution ofincident light and a quantity of visible light and images as an image,but also to a solid-state imaging element which images a distribution ofincident and a quantity of infrared light, X-rays, particles, and/or thelike. Also, in a broad sense, the technique of the present disclosure isapplicable to a general solid-state imaging element (physical quantitydistribution detection apparatus), such as a fingerprint detectingsensor, which detects distribution of other physical quantity such aspressure or electric capacitance and images as an image.

Note that the effects described in the present specification areexamples, and are not limitations. There may be an effect which is notdescribed in the present specification.

The present disclosure can also be in the following configurations.

(1) A solid-state imaging element including: a phase difference pixelwhich at least includes a photoelectric conversion unit arranged on anupper side of a semiconductor substrate on a side of a light incidentsurface, the photoelectric conversion unit including a photoelectricconversion film and upper and lower electrodes which sandwich thephotoelectric conversion film and at least one of which has a shapeseparated for each pixel, wherein the photoelectric conversion units ofa pair of the phase difference pixels have different photoelectricallyconverted regions.

(2) The solid-state imaging element according to (1), wherein thephotoelectric conversion units of the paired phase difference pixelsinclude different shapes of the electrode, which has a shape separatedfor each pixel.

(3) The solid-state imaging element according to (1) or (2), wherein theelectrode, which has a shape separated for each pixel, of thephotoelectric conversion unit is divided into at least two in the pixel.

(4) The solid-state imaging element according to (3), wherein one of thetwo divided electrodes is connected to a fixed electric potential.

(5) The solid-state imaging element according to (1), wherein thephotoelectric conversion units of the paired phase difference pixelshave different contact positions between the electrode, which has ashape separated for each pixel, and the photoelectric conversion film.

(6) The solid-state imaging element according to (1), wherein the phasedifference pixel further includes, on an upper side of the photoelectricconversion unit, a light shielding film configured to block incidentlight, and the paired phase difference pixels have differentarrangements of the light shielding film.

(7) The solid-state imaging element according to (6), wherein the lightshielding film is electrically connected to the electrode on the side ofthe light incident surface.

(8) The solid-state imaging element according to any one of (1) to (7),wherein the photoelectric conversion film is configured to convert greenwavelength light photoelectrically.

(9) The solid-state imaging element according to (8), wherein the phasedifference pixel further includes an inorganic photoelectric conversionunit in the semiconductor substrate, and the inorganic photoelectricconversion unit is configured to convert red and blue wavelength lightphotoelectrically.

(10) The solid-state imaging element according to any one of (1) to (9),wherein the photoelectric conversion film is capable of converting red,green, and blue wavelength light photoelectrically.

(11) The solid-state imaging element according to (10), wherein a red,green, or blue color filter is arranged on an upper side of thephotoelectric conversion film, and the photoelectric conversion film isconfigured to photoelectrically convert light having passed through thecolor filter.

(12) The solid-state imaging element according to any one of (1) to(11), further including a high refractive index layer on an upper sideof the photoelectric conversion unit.

(13) A production method of a solid-state imaging element, including:forming a phase difference pixel, which at least includes aphotoelectric conversion unit arranged on an upper side of asemiconductor substrate on a side of a light incident surface, in such amanner that the photoelectric conversion units of a pair of the phasedifference pixels have different photoelectrically converted regions,the photoelectric conversion unit including a photoelectric conversionfilm and upper and lower electrodes which sandwich the photoelectricconversion film and at least one of which has a shape separated for eachpixel.

(14) An electronic device including: a solid-state imaging elementincluding a phase difference pixel which at least includes aphotoelectric conversion unit arranged on an upper side of asemiconductor substrate on a side of a light incident surface, thephotoelectric conversion unit including a photoelectric conversion filmand upper and lower electrodes which sandwich the photoelectricconversion film and at least one of which has a shape separated for eachpixel, wherein the photoelectric conversion units of a pair of the phasedifference pixels have different photoelectrically converted regions.

(15) A solid-state imaging element including a phase difference pixelwhich includes an inorganic photoelectric conversion unit formed in asemiconductor substrate, and an organic photoelectric conversion unitarranged on an upper side of the semiconductor substrate on a side of alight incident surface, the organic photoelectric conversion unitincluding an organic photoelectric conversion film and upper and lowerelectrodes which sandwich the organic photoelectric conversion film andat least one of which has a shape separated for each pixel, wherein theinorganic photoelectric conversion units of a pair of the phasedifference pixels have different photoelectrically converted regions.

(16) The solid-state imaging element according to (15), wherein thephase difference pixel further includes, between the semiconductorsubstrate and the organic photoelectric conversion unit, a lightshielding film configured to shield a part of the inorganicphotoelectric conversion unit, and the paired phase difference pixelshave different arrangements of the light shielding film.

(17) The solid-state imaging element according to (15), wherein theinorganic photoelectric conversion units of the paired phase differencepixels are formed at different positions.

(18) The solid-state imaging element according to any one of (15) to(17), wherein the organic photoelectric conversion film is configured toconvert green wavelength light photoelectrically.

(19) The solid-state imaging element according to any one of (15) to(18), wherein the inorganic photoelectric conversion unit is configuredto convert at least one of red and blue wavelength lightphotoelectrically.

(20) The solid-state imaging element according to any one of (15) to(17), wherein the organic photoelectric conversion film is capable ofconverting red, green, and blue wavelength light photoelectrically.

(21) The solid-state imaging element according to (20), wherein a red,green, or blue color filter is arranged on an upper side of the organicphotoelectric conversion film, and the organic photoelectric conversionfilm is configured to photoelectrically convert light having passedthrough the color filter.

(22) The solid-state imaging element according to any one of (15) to(17), (20), and (21), wherein the inorganic photoelectric conversionunit is configured to convert infrared light photoelectrically.

(23) The solid-state imaging element according to any one of (15) to(22), further including a high refractive index layer on an upper sideof the organic photoelectric conversion unit.

(24) A production method of a solid-state imaging element, including:forming a phase difference pixel, which includes an inorganicphotoelectric conversion unit formed in a semiconductor substrate, andan organic photoelectric conversion unit arranged on an upper side ofthe semiconductor substrate on a side of a light incident surface, insuch a manner that the inorganic photoelectric conversion units of apair of the phase difference pixels have different photoelectricallyconverted regions, the organic photoelectric conversion unit includingan organic photoelectric conversion film and upper and lower electrodeswhich sandwich the organic photoelectric conversion film and at leastone of which has a shape separated for each pixel.

(25) An electronic device including: a solid-state imaging elementincluding a phase difference pixel which includes an inorganicphotoelectric conversion unit formed in a semiconductor substrate, andan organic photoelectric conversion unit arranged on an upper side ofthe semiconductor substrate on a side of a light incident surface, theorganic photoelectric conversion unit including an organic photoelectricconversion film and upper and lower electrodes which sandwich theorganic photoelectric conversion film and at least one of which has ashape separated for each pixel, wherein the inorganic photoelectricconversion units of a pair of the phase difference pixels have differentphotoelectrically converted regions.

(26) A solid-state imaging element comprising:

a phase difference detection pixel pair including first and second phasedifference detection pixels, each phase difference detection pixel ofthe first and second phase difference detection pixels including a firstphotoelectric conversion unit arranged at an upper side of asemiconductor substrate and a second photoelectric conversion unitarranged within the semiconductor substrate, wherein the firstphotoelectric conversion unit includes a first photoelectric conversionfilm sandwiched between an upper electrode and a lower electrode.

(27) The solid-state imaging element according to (26), wherein amajority of the photoelectric conversion unit of the first phasedifference detection pixel is above a left portion of the secondphotoelectric conversion unit of the first phase difference detectionpixel and a majority of the photoelectric conversion unit of the secondphase difference detection pixel is above a right portion of the secondphotoelectric conversion unit of the first phase difference detectionpixel.

(28) The solid-state imaging element according to any one of (26) and(27), further comprising an insulating film disposed between twophotoelectric conversion regions of the first photoelectric conversionunit of at least one of the first and second phase difference detectionpixels.

(29) The solid-state imaging element according to (28), wherein a firstof the two regions of the first photoelectric conversion unit is above aleft portion of the second photoelectric conversion unit of the firstphase difference detection pixel.

(30) The solid-state imaging element according to any one of (26) to(29), wherein the first photoelectric conversion film includes anorganic photoelectric conversion film.

(31) The solid-state imaging element according to any one of (26) to(30), wherein the second photoelectric conversion unit includes aninorganic photoelectric conversion film disposed within thesemiconductor substrate.

(32) The solid-state imaging element according to any one of (26) to(31), wherein each of the first and second phase detection pixelsincludes a floating diffusion region configured to accumulate a chargefrom the first photoelectric conversion unit, the floating diffusionregion located within the semiconductor substrate.

(33) The solid-state imaging element according to any one of (26) to(32), wherein a portion of the lower electrode in each of the first andsecond phase detection pixels is connected to a semiconductor region ofa predetermined potential.

(35) The solid-state imaging element according to (34), wherein thepredetermined potential is a ground (GND) potential.

(36) The solid-state imaging element according to (26), (27) and/or (30)to (32), wherein

in a left-half region of the first photoelectric conversion unit of thefirst phase difference detection pixel, the lower electrode is incontact with the photoelectric conversion film,in a right-half region of the first photoelectric conversion unit of thefirst phase difference detection pixel, the lower electrode is not incontact with the photoelectric conversion film,in a right-half region of the first photoelectric conversion unit of thesecond phase difference detection pixel, the lower electrode is incontact with the photoelectric conversion film, andin a left-half region of the first photoelectric conversion unit of thesecond phase difference detection pixel, the lower electrode is not incontact with the photoelectric conversion film.

(37) The solid-state imaging element according to (36), wherein

in the right-half region of the first photoelectric conversion unit ofthe first phase difference detection pixel, the lower electrode is incontact with an interlayer film, and in a left-half region of the firstphotoelectric conversion unit of the second phase difference detectionpixel, the lower electrode is in contact with an interlayer film.

(38) The solid-state imaging element according to (26), wherein thesecond photoelectric conversion unit occupies a left-half portion of thefirst phase difference detection pixel, and wherein the secondphotoelectric conversion unit occupies a right-half portion of thesecond phase difference detection pixel.

(39) The solid-state imaging element according to (26) and/or (38),further including an image generation pixel including a firstphotoelectric conversion unit arranged at the upper side of thesemiconductor substrate and configured to photoelectrically convert thefirst wavelength of light and a second photoelectric conversion unitarranged within the semiconductor substrate and configured tophotoelectrically convert the second wavelength of light,

wherein the second photoelectric conversion units of the first andsecond phase difference detection pixels are smaller than the secondphotoelectric conversion unit of the image generation pixel.

(40) The solid-state imaging element according to any one of (26) to(39), further including a plurality of image generation pixels and aplurality of phase difference detection pixels, wherein the upperelectrode is common to the plurality of image generation pixels and theplurality of phase difference detection pixels, and wherein the lowerelectrode is not common to the plurality of image generation pixels andthe plurality of phase difference detection pixels.

(41) The solid-state imaging element according to any one of (26) to(40), wherein each of the first and second phase difference detectionpixels include a third photoelectric conversion unit configured tophotoelectrically convert a third wavelength of light, wherein the thirdphotoelectric conversion unit is below the second photoelectricconversion unit.

(42) The solid-state imaging element according to any one of (26) to(41), wherein the first photoelectric conversion unit photoelectricallyconverts green light, the second photoelectric conversion unitphotoelectrically converts blue light, and the third photoelectricconversion unit photoelectrically converts red light.

(43) The solid-state imaging element according to any one of (26) to(42), further including a light-shielding film arranged between thefirst and second phase difference detection pixels.

(44) The solid-state imaging element according to (43), wherein thelight-shielding film transfers charge accumulated in the firstphotoelectric conversion unit to a floating diffusion region via aconductive plug and metal wiring.

(45) An electronic device comprising:

a solid state imaging element including a phase difference detectionpixel pair including first and second phase difference detection pixels,each phase difference detection pixel of the first and second phasedifference detection pixels including a first photoelectric conversionunit arranged at an upper side of a semiconductor substrate and a secondphotoelectric conversion unit arranged within the semiconductorsubstrate, wherein the first photoelectric conversion unit includes afirst photoelectric conversion film sandwiched between an upperelectrode and a lower electrode; andan optical unit configured to receive incident light and form an imageon an imaging surface of the solid-state imaging element.

(46) A method of manufacturing a solid-state imaging device, the methodcomprising: forming a plurality of first photoelectric conversion unitswithin a semiconductor substrate, the first photoelectric conversionunits configured to photoelectrically convert a first wavelength oflight;

forming a plurality of second photoelectric conversion units above thesemiconductor substrate, wherein the plurality of second photoelectricconversion units are configured to photoelectrically convert a secondwavelength of light.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   1 solid-state imaging element    -   2 PIXEL    -   2X normal pixel    -   2P phase difference pixel    -   3 PIXEL ARRAY UNIT    -   12 semiconductor substrate    -   PD1, PD2 photodiode    -   41 to 43 semiconductor region    -   52 organic photoelectric conversion film    -   53 a lower electrode    -   53 b upper electrode    -   53 c lower electrode    -   56 high refractive index layer    -   57 on-chip lens    -   71 lower electrode    -   81 interlayer film    -   91 organic photoelectric conversion film    -   92 color filter    -   101 light shielding film    -   111,112 semiconductor region    -   121 light shielding film    -   PD3 photodiode    -   131,141 semiconductor region    -   300 Imaging apparatus    -   302 solid-state imaging element

What is claimed is:
 1. A solid-state imaging element comprising: a phasedifference detection pixel pair including first and second phasedifference detection pixels, each phase difference detection pixel ofthe first and second phase difference detection pixels including a firstphotoelectric conversion unit arranged at an upper side of asemiconductor substrate and a second photoelectric conversion unitarranged within the semiconductor substrate, wherein the firstphotoelectric conversion unit includes a first photoelectric conversionfilm sandwiched between an upper electrode and a lower electrode.
 2. Thesolid-state imaging element of claim 1, wherein a majority of thephotoelectric conversion unit of the first phase difference detectionpixel is above a left portion of the second photoelectric conversionunit of the first phase difference detection pixel and a majority of thephotoelectric conversion unit of the second phase difference detectionpixel is above a right portion of the second photoelectric conversionunit of the first phase difference detection pixel.
 3. The solid-stateimaging element of claim 2, further comprising an insulating filmdisposed between two photoelectric conversion regions of the firstphotoelectric conversion unit of at least one of the first and secondphase difference detection pixels.
 4. The solid-state imaging element ofclaim 3, wherein a first of the two regions of the first photoelectricconversion unit is above a left portion of the second photoelectricconversion unit of the first phase difference detection pixel.
 5. Thesolid-state imaging element of claim 2, wherein the first photoelectricconversion film includes an organic photoelectric conversion film. 6.The solid-state imaging element of claim 5, wherein the secondphotoelectric conversion unit includes an inorganic photoelectricconversion film disposed within the semiconductor substrate.
 7. Thesolid-state imaging element of claim 2, wherein each of the first andsecond phase detection pixels includes a floating diffusion regionconfigured to accumulate a charge from the first photoelectricconversion unit, the floating diffusion region located within thesemiconductor substrate.
 8. The solid-state imaging element of claim 2,wherein a portion of the lower electrode in each of the first and secondphase detection pixels is connected to a semiconductor region of apredetermined potential.
 9. The solid-state imaging element of claim 8,wherein the predetermined potential is a ground (GND) potential.
 10. Thesolid-state imaging element of claim 2, wherein in a left-half region ofthe first photoelectric conversion unit of the first phase differencedetection pixel, the lower electrode is in contact with thephotoelectric conversion film, in a right-half region of the firstphotoelectric conversion unit of the first phase difference detectionpixel, the lower electrode is not in contact with the photoelectricconversion film, in a right-half region of the first photoelectricconversion unit of the second phase difference detection pixel, thelower electrode is in contact with the photoelectric conversion film,and in a left-half region of the first photoelectric conversion unit ofthe second phase difference detection pixel, the lower electrode is notin contact with the photoelectric conversion film.
 11. The solid-stateimaging element of claim 10, wherein in the right-half region of thefirst photoelectric conversion unit of the first phase differencedetection pixel, the lower electrode is in contact with an interlayerfilm, and in a left-half region of the first photoelectric conversionunit of the second phase difference detection pixel, the lower electrodeis in contact with an interlayer film.
 12. The solid-state imagingelement of claim 1, wherein the second photoelectric conversion unitoccupies a left-half portion of the first phase difference detectionpixel, and wherein the second photoelectric conversion unit occupies aright-half portion of the second phase difference detection pixel. 13.The solid-state imaging element of claim 12, further including an imagegeneration pixel including a first photoelectric conversion unitarranged at the upper side of the semiconductor substrate and configuredto photoelectrically convert the first wavelength of light and a secondphotoelectric conversion unit arranged within the semiconductorsubstrate and configured to photoelectrically convert the secondwavelength of light, wherein the second photoelectric conversion unitsof the first and second phase difference detection pixels are smallerthan the second photoelectric conversion unit of the image generationpixel.
 14. The solid-state imaging element of claim 1, further includinga plurality of image generation pixels and a plurality of phasedifference detection pixels, wherein the upper electrode is common tothe plurality of image generation pixels and the plurality of phasedifference detection pixels, and wherein the lower electrode is notcommon to the plurality of image generation pixels and the plurality ofphase difference detection pixels.
 15. The solid-state imaging elementof claim 1, wherein each of the first and second phase differencedetection pixels include a third photoelectric conversion unitconfigured to photoelectrically convert a third wavelength of light,wherein the third photoelectric conversion unit is below the secondphotoelectric conversion unit.
 16. The solid-state imaging element ofclaim 15, wherein the first photoelectric conversion unitphotoelectrically converts green light, the second photoelectricconversion unit photoelectrically converts blue light, and the thirdphotoelectric conversion unit photoelectrically converts red light. 17.The solid-state imaging element of claim 1, further including alight-shielding film arranged between the first and second phasedifference detection pixels.
 18. The solid-state imaging element ofclaim 17, wherein the light-shielding film transfers charge accumulatedin the first photoelectric conversion unit to a floating diffusionregion via a conductive plug and metal wiring.
 19. An electronic devicecomprising: a solid state imaging element including a phase differencedetection pixel pair including first and second phase differencedetection pixels, each phase difference detection pixel of the first andsecond phase difference detection pixels including a first photoelectricconversion unit arranged at an upper side of a semiconductor substrateand a second photoelectric conversion unit arranged within thesemiconductor substrate, wherein the first photoelectric conversion unitincludes a first photoelectric conversion film sandwiched between anupper electrode and a lower electrode; and an optical unit configured toreceive incident light and form an image on an imaging surface of thesolid-state imaging element.
 20. A method of manufacturing a solid-stateimaging device, the method comprising: forming a plurality of firstphotoelectric conversion units within a semiconductor substrate, thefirst photoelectric conversion units configured to photoelectricallyconvert a first wavelength of light; forming a plurality of secondphotoelectric conversion units above the semiconductor substrate,wherein the plurality of second photoelectric conversion units areconfigured to photoelectrically convert a second wavelength of light.